发明公开
EP3228583A1 METHOD FOR MANUFACTURING MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE, AND MEMS INFRARED DETECTOR 审中-公开
MEMS双层悬浮微结构的制造方法以及MEMS红外探测器

  • 专利标题: METHOD FOR MANUFACTURING MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE, AND MEMS INFRARED DETECTOR
  • 专利标题(中): MEMS双层悬浮微结构的制造方法以及MEMS红外探测器
  • 申请号: EP15866031.6
    申请日: 2015-08-20
  • 公开(公告)号: EP3228583A1
    公开(公告)日: 2017-10-11
  • 发明人: JING, Errong
  • 申请人: CSMC Technologies Fab1 Co., Ltd.
  • 申请人地址: No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 CN
  • 专利权人: CSMC Technologies Fab1 Co., Ltd.
  • 当前专利权人: CSMC Technologies Fab1 Co., Ltd.
  • 当前专利权人地址: No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 CN
  • 代理机构: Cabinet Laurent & Charras
  • 优先权: CN201410723696 20141202
  • 国际公布: WO2016086690 20160609
  • 主分类号: B81B7/02
  • IPC分类号: B81B7/02 B81C1/00
METHOD FOR MANUFACTURING MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE, AND MEMS INFRARED DETECTOR
摘要:
A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.
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