发明公开
- 专利标题： PREVENTION OF SUBCHANNEL LEAKAGE CURRENT
- 专利标题（中）： 防止子通道泄漏电流
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申请号： EP14909194.4申请日： 2014-12-22
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公开(公告)号： EP3238262A1公开(公告)日： 2017-11-01
- 发明人: JAMBUNATHAN, Karthik , GLASS, Glenn A. , MOHAPATRA, Chandra S. , MURTHY, Anand S. , CEA, Stephen M. , GHANI, Tahir
- 申请人： Intel Corporation
- 申请人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, CA 95054 US
- 代理机构： 2SPL Patentanwälte PartG mbB
- 国际公布： WO2016105336 20160630
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An embodiment includes an apparatus comprising: a fin structure on a substrate, the fin structure including fin top and bottom portions, a channel including a majority carrier, and an epitaxial (EPI) layer; an insulation layer including insulation layer top and bottom portions adjacent the fin top and bottom portions; wherein (a) the EPI layer comprises one or more of group IV and III-V materials, (b) the fin bottom portion includes a fin bottom portion concentration of dopants of opposite polarity to the majority carrier, (c) the fin top portion includes a fin top portion concentration of the dopants less than the fin bottom portion concentration, (d) the insulation layer bottom portion includes an insulation layer bottom portion concentration of the dopants, and (e) the insulation layer top portion includes an insulation top layer portion concentration greater than the insulation bottom portion concentration. Other embodiments are described herein.
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