发明公开
EP3244219A1 INTEGRATED LINEAR CURRENT SENSE CIRCUITRY FOR SEMICONDUCTOR TRANSISTOR DEVICES
审中-公开
半导体晶体管器件的集成线性电流检测电路
- 专利标题： INTEGRATED LINEAR CURRENT SENSE CIRCUITRY FOR SEMICONDUCTOR TRANSISTOR DEVICES
- 专利标题（中）： 半导体晶体管器件的集成线性电流检测电路
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申请号： EP17170829.0申请日： 2017-05-12
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公开(公告)号： EP3244219A1公开(公告)日： 2017-11-15
- 发明人: Mayell, Robert
- 申请人： Power Integrations, Inc.
- 申请人地址： 5245 Hellyer Avenue San Jose, CA 95138 US
- 专利权人： Power Integrations, Inc.
- 当前专利权人： Power Integrations, Inc.
- 当前专利权人地址： 5245 Hellyer Avenue San Jose, CA 95138 US
- 代理机构： Conroy, John
- 优先权： US201615154702 20160513
- 主分类号： G01R19/00
- IPC分类号： G01R19/00 ; H03K19/003
摘要：
An integrated circuit (IC) for sensing a current flowing through a transistor device includes a substrate and a current scaling circuit that includes first and second MOSFET devices. The first MOSFET device has a drain coupled to the switched FET at a first node and a source coupled to the substrate. The second MOSFET device has a source coupled to the substrate and a drain coupled to a second node. The first MOSFET device has a channel size that is K times larger than the second MOSFET device. Circuitry is included that equalizes a voltage across both the first MOSFET device and the second MOSFET device.
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