发明公开
EP3267468A1 PREPARATION METHOD FOR LOW TEMPERATURE POLYSILICON THIN FILM AND THIN FILM TRANSISTOR, THIN FILM TRANSISTOR , DISPLAY PANEL AND DISPLAY DEVICE
审中-公开
低温多晶硅薄膜和薄膜晶体管，薄膜晶体管，显示面板和显示装置的制备方法
- 专利标题： PREPARATION METHOD FOR LOW TEMPERATURE POLYSILICON THIN FILM AND THIN FILM TRANSISTOR, THIN FILM TRANSISTOR , DISPLAY PANEL AND DISPLAY DEVICE
- 专利标题（中）： 低温多晶硅薄膜和薄膜晶体管，薄膜晶体管，显示面板和显示装置的制备方法
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申请号： EP15883770.8申请日： 2015-07-16
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公开(公告)号： EP3267468A1公开(公告)日： 2018-01-10
- 发明人: NIU, Yanan , LIU, Chao , HE, Zengsheng , CHEN, Lei , ZHANG, Yujun
- 申请人： BOE Technology Group Co., Ltd.
- 申请人地址： No. 10 Jiuxianqiao Rd. Chaoyang District Beijing 100015 CN
- 专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人地址： No. 10 Jiuxianqiao Rd. Chaoyang District Beijing 100015 CN
- 代理机构： Brötz, Helmut
- 优先权： CN201510095020 20150303
- 国际公布： WO2016138715 20160909
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/20 ; H01L29/786
摘要：
Provided are a preparation method for a low temperature polysilicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device. The method comprises forming an amorphous silicon thin film (01) on a substrate (1), forming a pattern of a silicon oxide thin film (02) covered the amorphous silicon thin film (01), wherein the thickness of the silicon oxide thin film (02) in the default region is thicker than that of the silicon oxide thin film (02) located in the other regions except the default region, and a quasi-molecule laser is irradiated over the silicon oxide thin film (02) to make the amorphous silicon thin film (01) to be an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) in the default region is a target low temperature polysilicon thin film (05), so that the grain size of the polysilicon of the polycrystalline silicon thin film are formed more uniformly.
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