公开(公告)号：EP3267468A1

公开(公告)日：2018-01-10

申请号：EP15883770.8

申请日：2015-07-16

申请人： BOE Technology Group Co., Ltd.

发明人： NIU, Yanan ,  LIU, Chao ,  HE, Zengsheng ,  CHEN, Lei ,  ZHANG, Yujun

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L29/786

CPC分类号： H01L21/02675 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/3085 ,  H01L21/3086 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78675

摘要： Provided are a preparation method for a low temperature polysilicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device. The method comprises forming an amorphous silicon thin film (01) on a substrate (1), forming a pattern of a silicon oxide thin film (02) covered the amorphous silicon thin film (01), wherein the thickness of the silicon oxide thin film (02) in the default region is thicker than that of the silicon oxide thin film (02) located in the other regions except the default region, and a quasi-molecule laser is irradiated over the silicon oxide thin film (02) to make the amorphous silicon thin film (01) to be an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) in the default region is a target low temperature polysilicon thin film (05), so that the grain size of the polysilicon of the polycrystalline silicon thin film are formed more uniformly.

摘要翻译： 本发明提供一种低温多晶硅薄膜及薄膜晶体管，薄膜晶体管，显示面板及显示装置的制备方法。 该方法包括在衬底（1）上形成非晶硅薄膜（01），形成覆盖非晶硅薄膜（01）的氧化硅薄膜（02）的图案，其中氧化硅薄膜 （02）的厚度比位于除默认区域之外的其他区域中的氧化硅薄膜（02）厚，并且在氧化硅薄膜（02）上照射准分子激光以制成 非晶硅薄膜（01）为初始多晶硅薄膜（04），初始区域的初始多晶硅薄膜（04）为目标低温多晶硅薄膜（05），晶粒尺寸为 多晶硅薄膜的多晶硅更均匀地形成。