发明公开
EP3269039A1 TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM 审中-公开
设置栅极过度偏置的晶体管及其电路

TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM
摘要:
An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.
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