发明公开
EP3311420A1 OPTOELECTRONIC DETECTORS HAVING A DILUTE NITRIDE LAYER ON A SUBSTRATE WITH A LATTICE PARAMETER NEARLY MATCHING GAAS
审中-公开
光学检测器在基片上具有稀薄的氮化物层并具有近似匹配GAAS的晶格参数
- 专利标题： OPTOELECTRONIC DETECTORS HAVING A DILUTE NITRIDE LAYER ON A SUBSTRATE WITH A LATTICE PARAMETER NEARLY MATCHING GAAS
- 专利标题（中）： 光学检测器在基片上具有稀薄的氮化物层并具有近似匹配GAAS的晶格参数
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申请号： EP16738921.2申请日： 2016-06-21
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公开(公告)号： EP3311420A1公开(公告)日： 2018-04-25
- 发明人: YANKA, Robert , CHUNG, Seokjae , NUNNA, Kalyan , PELZEL, Rodney , WILLIAMS, Howard
- 申请人： IQE Plc.
- 申请人地址： Pascal Close IQE Plc Head Office St Mellons, Cardiff CF3 3LW GB
- 专利权人： IQE Plc.
- 当前专利权人： IQE Plc.
- 当前专利权人地址： Pascal Close IQE Plc Head Office St Mellons, Cardiff CF3 3LW GB
- 代理机构： Vossius & Partner Patentanwälte Rechtsanwälte mbB
- 优先权： US201562183060P 20150622
- 国际公布： WO2016209836 20161229
- 主分类号： H01L31/105
- IPC分类号： H01L31/105 ; H01L31/107 ; H01L31/0304 ; H01L31/18
摘要：
Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1 x 10 16 cm -3 at room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.
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