公开(公告)号：EP3718182A1

公开(公告)日：2020-10-07

申请号：EP19703903.5

申请日：2019-01-18

申请人： IQE plc

发明人： CLARK, Andrew ,  HAMMOND, Rich ,  DARGIS, Rytis ,  LEBBY, Michael ,  PELZEL, Rodney

IPC分类号： H01S5/026 ,  H01L21/02 ,  H01L21/8258

公开(公告)号：EP3714482A1

公开(公告)日：2020-09-30

申请号：EP18821784.8

申请日：2018-11-21

申请人： IQE Plc.

发明人： CLARK, Andrew ,  PELZEL, Rodney ,  JOHNSON, Andrew ,  JOEL, Andrew, Martin ,  DALY, Aidan John ,  JANDL, Adam Christopher

IPC分类号： H01L21/20

公开(公告)号：EP4374418A2

公开(公告)日：2024-05-29

申请号：EP22778075.6

申请日：2022-09-22

申请人： IQE plc

发明人： KAESS, Felix ,  KAO, Chen-Kai ,  LABOUTIN, Oleg

IPC分类号： H01L21/20

CPC分类号： H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02378 ,  H01L29/7783 ,  H01L29/2003

公开(公告)号：EP3472873A1

公开(公告)日：2019-04-24

申请号：EP17735698.7

申请日：2017-06-19

申请人： IQE Plc.

发明人： WANG, Wang, Nang ,  CLARK, Andrew ,  DARGIS, Rytis ,  LEBBY, Michael ,  PELZEL, Rodney

IPC分类号： H01L41/08 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02

摘要： Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.

公开(公告)号：EP3375091A1

公开(公告)日：2018-09-19

申请号：EP16801906.5

申请日：2016-11-02

申请人： IQE Plc.

发明人： PELZEL, Rodney ,  DARGIS, Rytis ,  CLARK, Andrew ,  WILLIAMS, Howard ,  CHIN, Patrick ,  LEBBY, Michael

IPC分类号： H03H3/02 ,  H03H3/08 ,  H03H9/17 ,  H01L41/08 ,  H01L41/083 ,  H01L41/319

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：EP2745329B1

公开(公告)日：2018-09-19

申请号：EP12750801.8

申请日：2012-08-14

申请人： IQE Plc.

发明人： JOHNSON, Dr Andrew

IPC分类号： H01L31/0328 ,  H01L31/0687 ,  H01L31/0725

CPC分类号： H01L31/0328 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267 ,  H01L31/02167 ,  H01L31/03044 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/1812 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photovoltaic device comprises an interface (8) between a layer of Group III-V material (3) and a layer of Group IV material (1) with a thin silicon diffusion barrier (6) provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells. In another aspect, a multijunction photovoltaic device is provided in which there are at least a first light-absorbing layer (111) of SiGe or SiGeSn and a second light-absorbing layer (112) of SiGeSn, both layers being lattice-matched to GaAs.

公开(公告)号：EP3311420A1

公开(公告)日：2018-04-25

申请号：EP16738921.2

申请日：2016-06-21

申请人： IQE Plc.

发明人： YANKA, Robert ,  CHUNG, Seokjae ,  NUNNA, Kalyan ,  PELZEL, Rodney ,  WILLIAMS, Howard

IPC分类号： H01L31/105 ,  H01L31/107 ,  H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L31/03048 ,  H01L31/105 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544

摘要： Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1 x 10 16 cm -3 at room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.

公开(公告)号：EP3915133B1

公开(公告)日：2024-06-05

申请号：EP20702592.5

申请日：2020-01-23

IPC分类号： C30B23/02 ,  C30B25/18 ,  C30B29/16 ,  H01L21/74

CPC分类号： H01L21/743 ,  C30B29/16 ,  C30B25/183 ,  C30B23/025

公开(公告)号：EP2745330B1

公开(公告)日：2020-06-03

申请号：EP12753571.4

申请日：2012-08-14

申请人： IQE Plc.

发明人： JOHNSON, Andrew ,  NELSON, Andrew William ,  HARPER, Robert Cameron

IPC分类号： H01L31/0328 ,  H01L31/0725 ,  H01L31/028 ,  H01L29/861 ,  H01L29/88

公开(公告)号：EP3465744A1

公开(公告)日：2019-04-10

申请号：EP17731356.6

申请日：2017-06-02

申请人： IQE Plc.

发明人： CLARK, Andrew ,  DARGIS, Rytis ,  LEBBY, Michael ,  PELZEL, Rodney

IPC分类号： H01L21/20