- 专利标题: METHOD FOR FABRICATING DAMASCENE STRUCTURE USING FLUOROCARBON FILM
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申请号: EP17207632.5申请日: 2017-12-15
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公开(公告)号: EP3336895A3公开(公告)日: 2018-07-04
- 发明人: ZHOU, Ming
- 申请人: Semiconductor Manufacturing International Corporation (Beijing) , Semiconductor Manufacturing International Corporation (Shanghai)
- 申请人地址: No. 18, Wenchang Road Beijing Economic and Technological Development Area, Daxing Area Beijing 100176 CN
- 专利权人: Semiconductor Manufacturing International Corporation (Beijing),Semiconductor Manufacturing International Corporation (Shanghai)
- 当前专利权人: Semiconductor Manufacturing International Corporation (Beijing),Semiconductor Manufacturing International Corporation (Shanghai)
- 当前专利权人地址: No. 18, Wenchang Road Beijing Economic and Technological Development Area, Daxing Area Beijing 100176 CN
- 代理机构: Klunker IP Patentanwälte PartG mbB
- 优先权: CN201611156276 20161215
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768
摘要:
A method for manufacturing an interconnect structure includes providing a metal interconnect layer, forming a dielectric layer (202) on the metal interconnect layer, forming a fluorocarbon layer (301) on the dielectric layer, forming a patterned hardmask layer on the fluorocarbon layer, etching the fluorocarbon layer and the dielectric layer using the patterned hardmask layer as a mask to form a trench in the dielectric layer and a through-hole through the dielectric layer to the metal interconnect layer, forming a metal layer filling the trench and the through-hole, and planarizing the metal layer until the planarized metal layer (801) has an upper surface that is flush with an upper surface of the fluorocarbon layer. The interconnect structure thus formed has an improved reliability.
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