发明公开
- 专利标题: LOW PROFILE, LOW INDUCTANCE POWER SWITCHING MODULE AND METHOD OF FORMING THEREOF
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申请号: EP16753519.4申请日: 2016-08-03
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公开(公告)号: EP3357089A1公开(公告)日: 2018-08-08
- 发明人: ROWDEN, Brian, Lynn , STEVANOVIC, Ljubisa, Dragoljub
- 申请人: General Electric Company
- 申请人地址: 1 River Road Schenectady, NY 12345 US
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: 1 River Road Schenectady, NY 12345 US
- 代理机构: Fischer, Michael Maria
- 优先权: US201514871163 20150930
- 国际公布: WO2017058354 20170406
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H02M7/00
摘要:
A method and system for a power module device is provided. The device includes a base, a circuit board including a plurality of gated switches formed of a semiconductor material, and an electrical bus member configured to connect to a voltage source having a first polarity. The bus member includes a length that is substantially greater than a width of the bus member and the width is substantially greater than a thickness of the bus member. The power module device also includes a second bus member configured to connect to a voltage source having a second polarity. The second bus member is positioned in a nested face-to-face configuration with respect to the first bus member. The power module device further includes a layer of electrical insulation positioned between the first bus member and the second bus member.
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