SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
摘要:
A spin current magnetization reversal element of the present disclosure includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the spin-orbit torque wiring extends in a second direction intersecting the first direction and the spin-orbit torque wiring is bonded to the first ferromagnetic metal layer, wherein a material of the spin-orbit torque wiring is a binary alloy represented by the formula A x B 1-x , a metal carbide, or a metal nitride, wherein A is an element selected from a group consisting of Al, Ti, and Pt, and B is an element selected from a group consisting of Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is an element selected from a group consisting of Al, Si, Ti, Y, and Ta, and B is an element selected from a group consisting of C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.
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