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    MAGNETORESISTIVE EFFECT ELEMENT
    3.
    发明公开
    MAGNETORESISTIVE EFFECT ELEMENT 审中-公开

    公开(公告)号：EP3979346A1

    公开(公告)日：2022-04-06

    申请号：EP21209257.1

    申请日：2016-03-28

    申请人： TDK Corporation

    发明人： SASAKI, Tomoyuki

    IPC分类号： H01L43/10 ,  G11B5/39 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB 2 O x , and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

    MAGNETORESISTIVE EFFECT ELEMENT
    5.
    发明公开
    MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
    磁电阻效应元件

    公开(公告)号：EP3279957A1

    公开(公告)日：2018-02-07

    申请号：EP16772730.4

    申请日：2016-03-28

    申请人： TDK Corporation

    发明人： SASAKI Tomoyuki

    IPC分类号： H01L43/10 ,  G11B5/39 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： G11B5/3909 ,  G11B5/39 ,  G11B2005/3996 ,  G11C11/161 ,  H01F1/405 ,  H01F10/1936 ,  H01L27/105 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB 2 O x , and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

    摘要翻译： 磁阻效应元件具有第一铁磁金属层，第二铁磁金属层和夹在第一和第二铁磁金属层之间的隧道势垒层，隧道势垒层由化学式AB2Ox表示，并且具有 其中阳离子以无序方式排列的尖晶石结构，A代表Mg或Zn的二价阳离子，B代表包含选自Al，Ga和In的多种元素的三价阳离子。

    MAGNETORESISTIVE ELEMENT, SPIN MOSFET, MAGNETIC SENSOR, AND MAGNETIC HEAD
    6.
    发明公开
    MAGNETORESISTIVE ELEMENT, SPIN MOSFET, MAGNETIC SENSOR, AND MAGNETIC HEAD 有权
    磁阻元件，SPIN-MOSFET，MAGNETISER传感器UND MAGNETKOPF

    公开(公告)号：EP3073532A4

    公开(公告)日：2017-07-12

    申请号：EP14864839

    申请日：2014-11-14

    申请人： TDK CORP

    发明人： SASAKI TOMOYUKI ,  OIKAWA TOHRU ,  KOIKE HAYATO

    IPC分类号： H01L29/82 ,  G11B5/39 ,  H01L29/66

    CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L29/1033 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02

    摘要： Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer (3); a first ferromagnetic layer (12A) disposed on the semiconductor channel layer (3); a second ferromagnetic layer (12B) disposed away from the first ferromagnetic layer (12A); and a non-magnetic first reference electrode (20) disposed away from the first ferromagnetic layer (12A) and the second ferromagnetic layer (12B), wherein current is input from the second ferromagnetic layer (12B) to the first ferromagnetic layer (12A) through the semiconductor channel layer (3), a voltage between the second ferromagnetic layer (12B) and the first reference electrode (20) is output.

    摘要翻译： 使用半导体的自旋传输元件存在比传统GMR元件和TMR元件更高的元件电阻的问题，使得难以获得高磁阻比。 一种包括半导体沟道层（3）的磁阻元件; 设置在所述半导体沟道层（3）上的第一铁磁层（12A）; 第二铁磁层（12B），其远离第一铁磁层（12A）设置; 以及远离第一铁磁层（12A）和第二铁磁层（12B）设置的非磁性第一参考电极（20），其中电流从第二铁磁层（12B）输入到第一铁磁层（12A） 通过半导体沟道层（3）输出第二铁磁层（12B）和第一参考电极（20）之间的电压。

    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE
    7.
    发明公开
    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE 审中-公开
    磁阻元件，使用磁阻元件的磁头，以及磁性回放装置

    公开(公告)号：EP3176843A1

    公开(公告)日：2017-06-07

    申请号：EP15827179.1

    申请日：2015-07-28

    申请人： National Institute for Materials Science

    发明人： FURUBAYASHI Takao ,  TAKAHASHI Yukiko ,  HONO Kazuhiro ,  DU Ye

    IPC分类号： H01L43/08 ,  G11B5/39 ,  H01L43/10

    摘要： The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

    摘要翻译： 本发明解决了提供使用具有铁磁金属/非磁性金属/铁磁金属的三层结构的薄膜的电流垂直平面巨磁电阻（CPPGMR）效应的元件的问题。 该问题通过设置有包含赫斯勒合金的下部铁磁层和上部铁磁层以及夹在下部铁磁层和上部铁磁层之间的间隔层的磁阻元件来解决，所述磁阻元件的特征在于，间隔件 层含有具有bcc结构的合金。 此外，合金优选具有无序的bcc结构。

    SENSING APPARATUS AND ASSOCIATED METHODS
    8.
    发明公开
    SENSING APPARATUS AND ASSOCIATED METHODS 有权
    感测装置和相关方法

    公开(公告)号：EP3174208A1

    公开(公告)日：2017-05-31

    申请号：EP15197081.1

    申请日：2015-11-30

    申请人： Nokia Technologies Oy

    发明人： Astley, Michael Robert

    IPC分类号： H03K17/96 ,  G01N27/04 ,  G01J5/20 ,  G01R33/09 ,  G01F23/24 ,  G05D23/24 ,  G06F3/045 ,  G11B5/39 ,  H01L43/08 ,  H01L27/146 ,  H04N5/378

    摘要： An apparatus comprising: a passive array 202 of resistive elements 250; a row selector switch 204 and a column selector switch 206 configured to respectively connect a particular row and a particular column of resistive elements to ground; and a feedback column selector switch 208 configured to connect all columns of resistive elements to a voltage source, except for the particular column connected to ground by the column selector switch; the voltage source configured to apply a voltage to the columns of resistive elements, the voltage matching a voltage dropped over the resistive element connected in circuit by the row and column selector switches; and further comprising: a row selector switch compensation circuit 220, a column selector switch compensation circuit 240 and/or a feedback column selector switch compensation circuit 260 each configured to apply a voltage across a corresponding dummy element equal and opposite to a voltage dropped over the corresponding selector switch.

    摘要翻译： 一种装置，包括：电阻元件250的无源阵列202; 行选择器开关204和列选择器开关206，其被配置为分别将特定行和特定列的电阻元件连接到地; 以及反馈列选择器开关208，被配置为将所有列的电阻元件连接到除了通过列选择器开关连接到地的特定列之外的电压源; 所述电压源被配置为向所述电阻元件列施加电压，所述电压与通过所述行和列选择器开关在电路中连接的所述电阻元件上下降的电压相匹配; 并且进一步包括：行选择器开关补偿电路220，列选择器开关补偿电路240和/或反馈列选择器开关补偿电路260，其每一个被配置为在对应的虚拟元件两端施加等于并且与在 相应的选择开关。

    CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTANCE EFFECT ELEMENT
    9.
    发明公开
    CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTANCE EFFECT ELEMENT 有权
    STROMPENDEL-MAGNETWIDERSTANDSEFFEKTELEMENT

    公开(公告)号：EP2983219A4

    公开(公告)日：2016-11-30

    申请号：EP14778602

    申请日：2014-04-02

    申请人： NAT INST FOR MATERIALS SCIENCE

    发明人： DU YE ,  FURUBAYASHI TAKAO ,  TAKAHASHI YUKIKO ,  HONO KAZUHIRO

    IPC分类号： H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  H01L43/10

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

    摘要： The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

    摘要翻译： 本发明的CPPGMR元件具有形成在基板11上以将Heusler合金构造成（100）方向的取向层12，作为层叠在取向层12上的用于磁电阻测量的电极的下层13， 每个堆叠在下层13上并由Heusler合金制成的下铁磁层14和上铁磁层16，夹在下铁磁层14和上铁磁层16之间的间隔层15和堆叠在其上的盖层17 用于表面保护的上铁磁层16。 这种方式使得可以廉价地提供使用具有铁磁性金属/非磁性金属/铁磁性金属的三层结构的薄膜的电流 - 垂直于平面的巨磁阻效应（CPPGMR）的元件， 从而表现出优异的表现。

    TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH MGO TUNNELING BARRIER LAYER AND NITROGEN-CONTAINING LAYER FOR MINIMIZATION OF BORON DIFFUSION
    10.
    发明公开
    TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH MGO TUNNELING BARRIER LAYER AND NITROGEN-CONTAINING LAYER FOR MINIMIZATION OF BORON DIFFUSION 审中-公开
    具有MGO隧道阻挡层和含氮层的隧道磁阻器（TMR）器件用于最小化硼扩散

    公开(公告)号：EP3002755A2

    公开(公告)日：2016-04-06

    申请号：EP15187046.6

    申请日：2015-09-28

    申请人： HGST Netherlands B.V.

    发明人： Freitag, James Mac ,  Gao, Zheng

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39

    摘要： A tunneling magnetoresistance (TMR) device, like a magnetic recording disk drive read head, has a nitrogen-containing layer between the MgO barrier layer and the free and/or reference ferromagnetic layers that contain boron. In one embodiment the free ferromagnetic layer includes a boron-containing layer and a trilayer nanolayer structure between the MgO barrier layer and the boron-containing layer. The trilayer nanolayer structure includes a thin Co, Fe or CoFe first nanolayer in contact with the MgO layer, a thin FeN or CoFeN second nanolayer on the first nanolayer and a thin Co, Fe or CoFe third nanolayer on the FeN or CoFeN nanolayer between the FeN or CoFeN nanolayer and the boron-containing layer. If the reference ferromagnetic layer also includes a boron-containing layer then a similar trilayer nanolayer structure may be located between the boron-containing layer and the MgO barrier layer.

    摘要翻译： 与磁记录盘驱动器读取头一样，隧穿磁阻（TMR）器件在MgO阻挡层和含有硼的自由和/或参考铁磁层之间具有含氮层。 在一个实施例中，自由铁磁层包括在MgO阻挡层和含硼层之间的含硼层和三层纳米层结构。 三层纳米层结构包括与MgO层接触的薄Co，Fe或CoFe第一纳米层，第一纳米层上的薄FeN或CoFeN第二纳米层以及第一纳米层上的FeN或CoFeN纳米层上的薄Co，Fe或CoFe第三纳米层 FeN或CoFeN纳米层和含硼层。 如果参考铁磁层也包括含硼层，则类似的三层纳米层结构可以位于含硼层和MgO阻挡层之间。