发明公开
- 专利标题: DISPOSITIF OPTOELECTRONIQUE MATRICIEL PRESENTANT UNE ELECTRODE SUPERIEURE TRANSPARENTE
- 专利标题(英): EP3394893A1 - Optoelectronic array device having an upper transparent electrode
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申请号: EP16823245.2申请日: 2016-12-19
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公开(公告)号: EP3394893A1公开(公告)日: 2018-10-31
- 发明人: BENWADIH, Mohammed , CHARLOT, Simon , VERILHAC, Jean-Marie , JOIMEL, Jérôme , ROHR, Pierre
- 申请人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives , ISORG , Trixell
- 申请人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives,ISORG,Trixell
- 当前专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives,ISORG,Trixell
- 当前专利权人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构: Priori, Enrico
- 优先权: FR1563284 20151223
- 国际公布: WO2017108670 20170629
- 主分类号: H01L27/30
- IPC分类号: H01L27/30 ; H01L51/44 ; H01L27/146
摘要:
The invention relates to an optoelectronic array device comprising a substrate (S) on which an array (MEI) of electrodes (EI), referred to as lower electrodes, is deposited; an active structure (STA), preferably continuous and organic, arranged on top of said array of lower electrodes, capable of detecting a light ray; and at least one so-called upper electrode (ES) extending above the active structure, said upper electrode being transparent to light rays emitted or detected by the active structure; as well as at least one conductor element (C2) supported by the substrate without interposing of said active structure and linking to said upper electrode via at least one vertical interconnection (IV), said conductor element having an electrical conductivity greater than that of said upper electrode. The device may also comprise a layer of scintillator material (SC) attached to said upper electrode in such a way as to constitute an X-ray imager.
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