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1.发明公开
公开(公告)号：EP3394893A1
公开(公告)日：2018-10-31
申请号：EP16823245.2
申请日：2016-12-19
IPC分类号： H01L27/30 , H01L51/44 , H01L27/146
CPC分类号： H01L27/308 , H01L27/14636 , H01L51/441 , H01L51/445 , Y02E10/549
摘要： The invention relates to an optoelectronic array device comprising a substrate (S) on which an array (MEI) of electrodes (EI), referred to as lower electrodes, is deposited; an active structure (STA), preferably continuous and organic, arranged on top of said array of lower electrodes, capable of detecting a light ray; and at least one so-called upper electrode (ES) extending above the active structure, said upper electrode being transparent to light rays emitted or detected by the active structure; as well as at least one conductor element (C2) supported by the substrate without interposing of said active structure and linking to said upper electrode via at least one vertical interconnection (IV), said conductor element having an electrical conductivity greater than that of said upper electrode. The device may also comprise a layer of scintillator material (SC) attached to said upper electrode in such a way as to constitute an X-ray imager.
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公开(公告)号：EP4309058A1
公开(公告)日：2024-01-24
申请号：EP22714859.0
申请日：2022-03-15
申请人： ISORG
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公开(公告)号：EP3622566A1
公开(公告)日：2020-03-18
申请号：EP18728443.5
申请日：2018-05-11
申请人： ISORG
发明人： JOIMEL, Jérôme , FAUPIN, Eric
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