- 专利标题： VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS
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申请号： EP17701394.3申请日： 2017-01-06
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公开(公告)号： EP3411905A2公开(公告)日： 2018-12-12
- 发明人: MACHKAOUTSAN, Vladimir , SONG, Stanley Seungchul , BADAROGLU, Mustafa , ZHU, John Jianhong , BAO, Junjing , XU, Jeffrey Junhao , YANG, Da , NOWAK, Matthew Michael , YEAP, Choh Fei
- 申请人： Qualcomm Incorporated
- 申请人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US201662289819P 20160201; US201615097142 20160412
- 国际公布： WO2017136100 20170810
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/8234 ; H01L21/8238 ; H01L29/423 ; H01L27/06
摘要：
A device includes a substrate, a first nanowire field effect transistor (FET), and a second nanowire FET positioned between the substrate and the first nanowire FET. The device also includes a first nanowire electrically coupled to the first nanowire FET and to the second nanowire FET.
公开/授权文献
- EP3411905B1 VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS 公开/授权日：2023-08-30
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