A high-reliability one-time programmable memory adopting series high voltage partition, which relates to integrated circuit technology and comprises a first MOS tube (1), a second MOS tube (2) and an anti-fuse element (4), wherein a gate end of the first MOS tube (1) is connected to a second connecting line (WS), a first connecting end of the first MOS tube is connected to a gate end of the second MOS tube (2) and a voltage limiting device (3), and a second connecting end of the first MOS tube is connected to a third connecting line (BL); a first connecting end of the second MOS tube (2) is connected to a fourth connecting line (BR), a second connecting end of the second MOS tube is connected to the third connecting line (BL), and a gate end of the second MOS tube is connected to the voltage limiting device (3) and the second connecting end of the first MOS tube (1). The high-reliability one-time programmable memory adopting series high voltage partition further comprises the voltage limiting device (3), which comprises a control end and two connecting ends, wherein the control end is connected to a control signal line (WB), one connecting end is connected to a first connecting line (WP) through the anti-fuse device (4), and the other connecting end is connected to the gate end of the second MOS tube (2). In this way, the problem in the prior art that a device of a critical path is damaged and degraded due to high voltage pulse is solved, and possible hidden leakage troubles are avoided.