- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD
-
申请号： EP17774500.7申请日： 2017-03-21
-
公开(公告)号： EP3439025A1公开(公告)日： 2019-02-06
- 发明人: KURIHARA Hiroyoshi , FUKUMOTO Hideki
- 申请人： Mitsui Chemicals Tohcello, Inc.
- 申请人地址： 7, Kandamitoshiro-cho Chiyoda-ku Tokyo 101-8485 JP
- 专利权人： Mitsui Chemicals Tohcello, Inc.
- 当前专利权人： Mitsui Chemicals Tohcello, Inc.
- 当前专利权人地址： 7, Kandamitoshiro-cho Chiyoda-ku Tokyo 101-8485 JP
- 代理机构： Hoffmann Eitle
- 优先权： JP2016070955 20160331
- 国际公布： WO2017169959 20171005
- 主分类号： H01L21/304
- IPC分类号： H01L21/304
摘要：
A method for manufacturing a semiconductor device of the present invention includes at least the following three steps.
(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer
As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.
(A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film (100) attached to the circuit-formed surface side of the semiconductor wafer
(B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer
(C) A step of radiating ultraviolet rays to the adhesive film (100) and then removing the adhesive film (100) from the semiconductor wafer
As the adhesive film (100), an adhesive film including a base material layer (10) and an ultraviolet-curable adhesive resin layer (20) provided on one surface side of the base material layer (10) is used. In addition, in the adhesive film (100), the adhesive resin layer (20) includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of a surface of the adhesive resin layer (20) after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.
公开/授权文献
- EP3439025B1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2022-02-23
信息查询
IPC分类:
