发明公开
- 专利标题: LIGHT DETECTION DEVICE
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申请号: EP17834415.6申请日: 2017-07-26
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公开(公告)号: EP3493276A1公开(公告)日: 2019-06-05
- 发明人: ISHIDA Atsushi , HOSOKAWA Noburo , NAGANO Terumasa , BABA Takashi
- 申请人: Hamamatsu Photonics K.K.
- 申请人地址: 1126-1, Ichino-cho Higashi-ku Hamamatsu-shi, Shizuoka 435-8558 JP
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: 1126-1, Ichino-cho Higashi-ku Hamamatsu-shi, Shizuoka 435-8558 JP
- 代理机构: EIP
- 优先权: JP2016147378 20160727
- 国际公布: WO2018021413 20180201
- 主分类号: H01L31/107
- IPC分类号: H01L31/107 ; H01L27/146
摘要:
A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.
公开/授权文献
- EP3493276B1 LIGHT DETECTION DEVICE 公开/授权日:2022-03-23
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