公开(公告)号：EP3493275A1

公开(公告)日：2019-06-05

申请号：EP17834413.1

申请日：2017-07-26

申请人： Hamamatsu Photonics K.K.

发明人： ISHIDA Atsushi ,  NAGANO Terumasa ,  BABA Takashi

IPC分类号： H01L31/107 ,  H01L27/146

摘要： A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

公开(公告)号：EP3279927A1

公开(公告)日：2018-02-07

申请号：EP16773202.3

申请日：2016-03-31

申请人： Hamamatsu Photonics K.K.

发明人： ISHIDA Atsushi ,  HOSOKAWA Noburo ,  NAGANO Terumasa ,  BABA Takashi

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

摘要： A through hole 7 is a vertical hole. When attention is paid to regions on both sides of a center line CL of the through hole 7 in a plane including the center line CL of the through hole, it is assumed that a segment that connects a first point X1 corresponding to the edge of an opening 10a of an insulating layer 10 and a second point X2 corresponding to the edge of a second opening 7b is a first segment S1, a segment that connects the second point X2 and a third point X3 corresponding to an intersection point between the second opening 7b and a surface 10b of the insulating layer 10 is a second segment S2, and a segment that connects the third point X3 and the first point X1 is a third segment S3. In this case, the first area A1 of the insulating layer 10 that is located on one side with respect to the first segment S1 is larger than the sum of the second area A2 of the insulating layer 10 that is surrounded by the first segment S1, the second segment S2, and the third segment S3 and the third area A3 of the insulating layer 10 that is located on the other side with respect to the third segment S3.

摘要翻译： 通孔7是垂直孔。 当关注贯通孔7的中心线CL的两侧的区域时，在包含贯通孔的中心线CL的平面中，假设连接与第一点X1对应的第一点X1 绝缘层10的开口10a和与第二开口7b的边缘相对应的第二点X2是第一段S1，连接第二点X2和对应于第二开口7b之间的交点的第三点X3的段 并且绝缘层10的表面10b是第二段S2，并且连接第三点X3和第一点X1的段是第三段S3。 在这种情况下，绝缘层10的相对于第一段S1位于一侧的第一区域A1大于由第一段S1包围的绝缘层10的第二区域A2的总和， 第二区段S2以及绝缘层10的第三区段S3和第三区域A3，其位于相对于第三区段S3的另一侧。

公开(公告)号：EP3825723A1

公开(公告)日：2021-05-26

申请号：EP19837776.4

申请日：2019-06-10

申请人： HAMAMATSU PHOTONICS K.K.

发明人： TSUCHIYA Ryutaro ,  NAGANO Terumasa ,  BABA Takashi

IPC分类号： G01S7/486 ,  G01S7/481 ,  G01S17/89 ,  H01L31/107

摘要： A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

公开(公告)号：EP3493276A1

公开(公告)日：2019-06-05

申请号：EP17834415.6

申请日：2017-07-26

申请人： Hamamatsu Photonics K.K.

发明人： ISHIDA Atsushi ,  HOSOKAWA Noburo ,  NAGANO Terumasa ,  BABA Takashi

IPC分类号： H01L31/107 ,  H01L27/146

摘要： A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.