发明公开
- 专利标题： METHOD FOR PRODUCING YTTRIUM OXIDE-CONTAINING THIN FILM BY ATOMIC LAYER DEPOSITION
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申请号： EP18775277.9申请日： 2018-02-13
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公开(公告)号： EP3604613A1公开(公告)日： 2020-02-05
- 发明人: NISHIDA, Akihiro , YAMASHITA, Atsushi
- 申请人： Adeka Corporation
- 申请人地址： 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 专利权人： Adeka Corporation
- 当前专利权人： Adeka Corporation
- 当前专利权人地址： 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 代理机构： Kador & Partner PartG mbB
- 优先权： JP2017064631 20170329
- 国际公布： WO2018179924 20181004
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; H01L21/31 ; H01L21/316
摘要：
A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.
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