公开(公告)号：EP3677585A1

公开(公告)日：2020-07-08

申请号：EP18850439.3

申请日：2018-08-09

申请人： Adeka Corporation

发明人： OKADA, Nana ,  HATASE, Masako ,  NISHIDA, Akihiro ,  SAKURAI, Atsushi

IPC分类号： C07F5/00 ,  C23C16/18 ,  H01L21/31

摘要： The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

wherein R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 2 represents an isopropyl group, a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group, R 3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 4 represents an alkyl group having 1 to 4 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom or a lutetium atom, and n represents the valence of the atom represented by M; here, when M is a lanthanum atom, R 2 is a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group.

公开(公告)号：EP3476827A1

公开(公告)日：2019-05-01

申请号：EP17815056.1

申请日：2017-05-15

申请人： Adeka Corporation

发明人： OKABE, Makoto ,  NISHIDA, Akihiro ,  YOSHINO, Tomoharu

IPC分类号： C07C251/08 ,  C07F9/00 ,  C23C16/18 ,  H01L21/285

摘要： A vanadium compound represented by following General Formula (1).

In General Formula (1), R 1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R 1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R 1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

公开(公告)号：EP4249629A1

公开(公告)日：2023-09-27

申请号：EP21894643.2

申请日：2021-11-16

申请人： ADEKA CORPORATION

发明人： NISHIDA, Akihiro ,  HATASE, Masako ,  YOSHINO, Tomoharu ,  OOE, Yoshiki ,  MITSUI, Chiaki

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

摘要： Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300°C or more and less than 450°C to form the thin-film containing a hafnium atom on the surface of the substrate:

wherein R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R 3 and R 4 each independently represent an alkyl group having 1 to 3 carbon atoms.

公开(公告)号：EP4039847A1

公开(公告)日：2022-08-10

申请号：EP20873107.5

申请日：2020-09-24

申请人： ADEKA CORPORATION

发明人： NISHIDA, Akihiro ,  YAMASHITA, Atsushi

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  H01L21/31 ,  H01L21/316

摘要： The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including:
a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and
a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.

公开(公告)号：EP3604613A1

公开(公告)日：2020-02-05

申请号：EP18775277.9

申请日：2018-02-13

申请人： Adeka Corporation

发明人： NISHIDA, Akihiro ,  YAMASHITA, Atsushi

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/316

摘要： A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

公开(公告)号：EP3144293B1

公开(公告)日：2018-09-19

申请号：EP15793276.5

申请日：2015-04-08

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  NISHIDA, Akihiro ,  OKABE, Makoto

IPC分类号： C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F1/08 ,  C23C16/455

CPC分类号： C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

摘要： This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：EP3144293A1

公开(公告)日：2017-03-22

申请号：EP15793276.5

申请日：2015-04-08

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  SAKURAI, Atsushi ,  NISHIDA, Akihiro ,  OKABE, Makoto

IPC分类号： C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F1/08

CPC分类号： C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

摘要： This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

摘要翻译： 本发明提供由以下通式（I）表示的铜化合物。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子数的直链或支链烷基; 这提供R 1和R 2为甲基，R 3表示直链或支链烷基具有2至5个碳原子数; 并且提供没有R.sup.1是甲基和R 2是乙基，R 3 darstellt甲基或一个直链或支链的烷基具有3至5，一种起始原料的碳原子数为形成本的薄膜 本发明包括通式（I）表示的铜化合物。 本发明可以提供具有低的熔点的铜化合物，可以以液体状态进行输送时，具有高的蒸气压，并且是容易蒸发，因此形成薄膜，该薄膜使用寻求铜化合物的起始原料 ，

公开(公告)号：EP4074860A1

公开(公告)日：2022-10-19

申请号：EP20899821.1

申请日：2020-12-01

申请人： ADEKA CORPORATION

发明人： NISHIDA, Akihiro ,  YAMASHITA, Atsushi

IPC分类号： C23C16/18 ,  C23C28/02

摘要： Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

公开(公告)号：EP3783130A1

公开(公告)日：2021-02-24

申请号：EP19788720.1

申请日：2019-04-08

申请人： ADEKA CORPORATION

发明人： ENZU, Masaki ,  TAKEDA, Keisuke ,  NISHIDA, Akihiro

IPC分类号： C23C16/40 ,  C07F3/02 ,  C23C16/455 ,  H01L21/316

摘要： Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a magnesium compound represented by the following general formula (1):

where R 1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.

公开(公告)号：EP3312187A1

公开(公告)日：2018-04-25

申请号：EP16811362.9

申请日：2016-05-17

申请人： Adeka Corporation

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  NISHIDA, Akihiro ,  SUGIURA, Nana

IPC分类号： C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC分类号： C23C16/18 ,  C07F13/00 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C07F15/065 ,  C23C16/4481 ,  C23C16/45553 ,  H01L21/285

摘要： A novel compound represented by the general formula (I) or (II) below:

[in the formula, each of R 1 and R 2 independently represent a C 1∼12 hydrocarbon group, and Si(R 3 ) 3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R 1 and R 2 are different groups; R 3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

摘要翻译： 由下述通式（I）或（II）表示的新型化合物：[式中，R 1和R 2各自独立地表示碳原子数1〜12的烃基，Si（R 3）3可以任选地被取代为氢原子 烃基; 然而，R1和R2是不同的组; R3代表甲基或乙基; M代表金属原子或硅原子; 并且n是1至4的整数]。