OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOE-LECTRONIC DEVICE
摘要:
An optoelectronic device (10) comprises a carrier layer (11) and a p-n diode layer (12) arranged over the carrier layer (11) and provided in a mesa structure, wherein the p-n diode layer (12) comprises a main surface (16) and side walls (18, 19) with the main surface (16) facing the carrier layer (11), and wherein at least a portion of at least one of the side walls (18, 19) of the p-n diode layer (12) forms an angle with the main surface (16) in the range from 88° to 92°.
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