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公开(公告)号：EP2606515B1
公开(公告)日：2020-01-01
申请号：EP11748330.5
申请日：2011-08-04
发明人： WIRTH, Ralph
IPC分类号： H01L33/56 , H01L33/44 , H01L25/075 , G02B5/02
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公开(公告)号：EP2406828B1
公开(公告)日：2019-07-10
申请号：EP10707060.9
申请日：2010-03-10
IPC分类号： H01L31/0216 , H01L31/0203 , H01L31/0352
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3.发明授权
公开(公告)号：EP2279533B1
公开(公告)日：2019-01-09
申请号：EP09753513.2
申请日：2009-04-17
IPC分类号： H01L31/167 , H01L33/00 , G01V8/12 , H01L25/16 , H01L31/0203
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公开(公告)号：EP3745472A1
公开(公告)日：2020-12-02
申请号：EP19177113.8
申请日：2019-05-28
发明人： KREUTER, Philipp , BIEBERSDORF, Andreas , KLEMP, Christoph , EBBECKE, Jens , PIETZONKA, Ines , SUNDGREN, Petrus
摘要： A method for manufacturing a semiconductor device, particularly an optoelectronic device, proposes to provide a growth substrate (10); to deposit an n-doped first layer (20) and an active region (30) on the n-doped first layer (20); then a second layer (50) is deposited onto the active region (30); the second layer is doped with Mg in the second layer (50); Subsequently to depositing Mg, Zn is deposited in the second layer (50) such that a concentration of Zn in the second layer is decreasing from a first value to a second value in a first area of the second layer adjacent to the active region, said first area in the range of 5 nm to 200 nm, in particularly less than 50nm.
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公开(公告)号：EP1805813B1
公开(公告)日：2020-01-22
申请号：EP05804392.8
申请日：2005-10-25
发明人： BÖRNER, Mike , MÖLLMER, Frank
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公开(公告)号：EP3745474A1
公开(公告)日：2020-12-02
申请号：EP19177109.6
申请日：2019-05-28
发明人： BEHRINGER, Martin , LORENZO, Zini , WANG, Xue
摘要： An optoelectronic device (10) comprises a carrier layer (11) and a p-n diode layer (12) arranged over the carrier layer (11) and provided in a mesa structure, wherein the p-n diode layer (12) comprises a main surface (16) and side walls (18, 19) with the main surface (16) facing the carrier layer (11), and wherein at least a portion of at least one of the side walls (18, 19) of the p-n diode layer (12) forms an angle with the main surface (16) in the range from 88° to 92°.
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7.发明公开
公开(公告)号：EP3745471A1
公开(公告)日：2020-12-02
申请号：EP19177581.6
申请日：2019-05-31
发明人： EBBECKE, Jens , KREUTER, Philipp , KLEMP, Christoph , BIEBERSDORF, Andreas , PIETZONKA, Ines , SUNDGREN, Petrus
IPC分类号： H01L33/00 , H01L21/268 , H01L21/18
摘要： A method of treating a semiconductor wafer (10) comprising a set of Aluminum Gallium Indium Phosphide light emitting diodes or AlGaInP-LEDs to increase the light generating efficiency of the AlGaInP-LEDs,
wherein each ALGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area (20) and a peripheral edge (22) surrounding the central light generating area,
the method comprising the step of treating the peripheral edge (22) of the core active layer of each AlGaInP-LED with a laser beam (L), thus increasing the minimum band gap in each peripheral edge (22) to such an extent that, during later operation of the AlGaInP-LED, the electron-hole recombination is essentially confined to the central light generating area.-
公开(公告)号：EP3745475A1
公开(公告)日：2020-12-02
申请号：EP19177112.0
申请日：2019-05-28
发明人： Ebbecke, Jens
摘要： A method of producing an array of micro-LEDs (11), the method comprises the step of:
providing an array of micro-LEDs (11)comprising:
a substrate (13), and
a plurality of micro-LEDs (15), wherein the micro-LEDs (15) form an array-like arrangement on a topside (17) of the substrate (13), and
wherein a lower surface (27) of each micro-LED (15) is arranged on the topside (17) of the substrate (13), wherein each micro-LED (15) comprises:
a layered structure with a first doped layer (19), a second doped layer (21), and an active layer (23) between the first doped layer (19) and the second doped layer (21),
wherein the layered structure has sidewalls (25) extending between an upper surface (27) and a lower surface (29) of the layered structure and forming an outer boundary of at least the first doped layer (19), the second doped layer (21), and the active layer (23),
wherein the upper surface (27) extends above the first doped layer (19) and the lower surface (29) extends below the second doped layer (21),
wherein a first insulating layer (31) is arranged on the upper surface (27) and a second insulating layer (33) is arranged on the sidewalls (25),
wherein the first insulating layer (31) has a through opening (35) at the upper surface (27),
the method further comprises the step of:
depositing a conductive layer (37) on each of the micro-LEDs (15) of the array of micro-LEDs (11), such that the conductive layer (37) is disposed over the first insulating layer (31) and protrudes into the opening (35) and contacts the upper surface (27) and such that the conductive layer (37) covers the second insulating layer (33),
wherein the step of depositing the conductive layer (37) comprises:
exposing the array of micro-LEDs to a material beam (41) comprising material for forming the conductive layer (37),
wherein the material beam (15) has a beam direction (D), and wherein the array of micro-LEDs (11) is disposed in the material beam (41) such that the micro-LEDs (15) face the material beam (41),
wherein a surface normal (N) is perpendicular to the topside (17) of the substrate (13), and wherein the surface normal (N) and the beam direction (D) include an angle (α) which is not zero degrees.-
公开(公告)号：EP2288943B1
公开(公告)日：2019-12-18
申请号：EP09765456.0
申请日：2009-06-18
发明人： HAAS, Heinz , GIZIEWICZ, Wojciech
IPC分类号： G01V8/10 , H01L31/173 , H01L31/0232
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公开(公告)号：EP1604385B1
公开(公告)日：2019-12-11
申请号：EP04710788.3
申请日：2004-02-13
IPC分类号： H01L31/0203 , H01L33/48 , H01L23/057 , H01L23/00 , H01L25/16 , H01L33/62
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