发明公开
- 专利标题： METHOD FOR PRODUCING SEMICONDCUTOR-TYPE SINGLE-WALLED CARBON NANOTUBE DISPERSION
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申请号： EP19806926.2申请日： 2019-05-22
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公开(公告)号： EP3798186A1公开(公告)日： 2021-03-31
- 发明人: HIRAISHI Atsushi
- 申请人： Kao Corporation
- 申请人地址： JP Chuo-ku, Tokyo 103-8210 14-10, Nihonbashi-Kayabacho 1-chome,
- 代理机构： Hoffmann Eitle
- 优先权： JP2018098658 20180523
- 国际公布： WO2019225651 20191128
- 主分类号： C01B32/172
- IPC分类号： C01B32/172 ; B01F17/52 ; B03B5/28 ; B82Y40/00 ; C01B32/159 ; C01B32/174
摘要：
A method for producing a semiconducting SWCNT dispersion of the present invention comprises: a step A of preparing a to-be-separated SWCNT dispersion that includes a SWCNT mixture, an aqueous medium, and a polymer including a structural unit A derived from a monomer represented by Formula (1), and a step B of centrifuging the to-be-separated SWCNT dispersion and subsequently collecting a supernatant including the semiconducting SWCNT from the centrifuged to-be-separated SWCNT dispersion. The weight-average molecular weight of the polymer is 1,000 or more and 100,000 or less.
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