- 专利标题： HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
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申请号： EP21177502.8申请日： 2017-05-08
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公开(公告)号： EP3905340A1公开(公告)日： 2021-11-03
- 发明人: LEE, Won Sang
- 申请人： RFHIC Corporation
- 申请人地址： KR Gyeonggi-do 14055 RFHIC Bldg. 41-14 Burim-ro 170 beon-gil Dongan-gu Anyang-si
- 代理机构： Haseltine Lake Kempner LLP
- 优先权： US201715588650 20170507
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/338 ; H01L29/417 ; H01L29/20 ; H01L23/48 ; H01L21/768 ; H01L29/41 ; H01L29/06
摘要：
HEMT having a drain field plate (140) is provided. The drain field plate (140) is formed in the area between the gate (118) and drain (104) of a HEMT. The drain field plate (140) includes a metal pad (140) that has a larger projection area than the drain pad (104). The drain field plate (140) and semiconductor layer (102) disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area (102), which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate (100) under the active area (203) may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.
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