公开(公告)号：EP4394885A1

公开(公告)日：2024-07-03

申请号：EP23217716.2

申请日：2023-12-18

申请人： NXP USA, Inc.

发明人： Grote, Bernhard ,  Hu, Jie ,  Renaud, Philippe ,  Zhu, Congyong ,  Green, Bruce McRae

IPC分类号： H01L29/41 ,  H01L29/778 ,  H01L21/338 ,  H01L29/423 ,  H01L29/08 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/0843 ,  H01L29/66462 ,  H01L29/42316

摘要： A semiconductor device includes a semiconductor substrate (110) with an upper surface and a channel, source (141) and drain (146) electrodes over the upper surface of the semiconductor substrate, a passivation layer (130) between the source and drain electrodes, a first dielectric layer over the passivation layer, a gate electrode (160) between the source and drain electrodes, and a conductive field plate (195) adjacent to the gate electrode. The passivation layer includes a lower passivation sub-layer and an upper passivation sub-layer over the lower passivation sub-layer. The gate electrode includes a lower portion that extends through the passivation layer. The conductive field plate includes a first portion with a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer, and an overhanging portion (197) that extends over an upper surface of the first dielectric layer.

公开(公告)号：EP4073847B1

公开(公告)日：2024-04-24

申请号：EP20817032.4

申请日：2020-12-08

IPC分类号： H01L29/778 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L21/337 ,  H01L29/423 ,  H01L29/417 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/41766 ,  H01L29/66462 ,  H01L21/02513 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02505 ,  H01L21/0262

公开(公告)号：EP4341997A1

公开(公告)日：2024-03-27

申请号：EP22729381.8

申请日：2022-05-18

申请人： Wolfspeed, Inc.

发明人： BISGES, Joshua ,  BOTHE, Kyle ,  KING, Matthew

IPC分类号： H01L29/40 ,  H01L23/31 ,  H01L23/00 ,  H01L29/423 ,  H01L21/338 ,  H01L29/778 ,  H01L29/34 ,  H01L29/20 ,  H01L29/417

公开(公告)号：EP3480841B1

公开(公告)日：2024-03-27

申请号：EP17820363.4

申请日：2017-06-30

发明人： FUJITA, Shizuo ,  KANEKO, Kentaro ,  HITORA, Toshimi ,  TANIKAWA, Tomochika

IPC分类号： H01L21/365 ,  H01L21/336 ,  H01L21/337 ,  H01L21/338 ,  H01L21/368 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H02M3/28 ,  H01L21/02 ,  C23C18/12

公开(公告)号：EP4276886A1

公开(公告)日：2023-11-15

申请号：EP21917475.2

申请日：2021-01-07

申请人： FUJITSU LIMITED

发明人： TAKAHASHI, Tsuyoshi ,  KAWAGUCHI, Kenichi

IPC分类号： H01L21/338 ,  H01L29/812 ,  H01L29/778

摘要： A semiconductor device includes a substrate; a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode and the drain electrode being formed on the substrate; a plurality of nonconductive nanowires formed two-dimensionally on an upper surface of the substrate so as to extend perpendicularly to the upper surface of the substrate; an electrode pad formed at upper ends of the plurality of nanowires so as to have a gap between the electrode pad and the substrate, the electrode pad being supported by the plurality of nanowires; and an extraction electrode connecting the electrode pad and the gate electrode.

公开(公告)号：EP4239686A1

公开(公告)日：2023-09-06

申请号：EP23159048.0

申请日：2023-02-28

申请人： STMicroelectronics S.r.l.

发明人： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L21/336 ,  H01L29/423 ,  H01L29/417 ,  H01L29/20

摘要： The HEMT device (50) is formed by a heterostructure (62), by an insulation layer (68) that extends on the heterostructure and has a thickness along a first direction (Z), and by a gate region (74). The gate region has a first portion (74A) that extends through the insulation layer, throughout the thickness of the insulation layer, and has a second portion (74B) that extends in the heterostructure. The first portion of the gate region has a first width (Lw) along a second direction (X) transverse to the first direction. The second portion of the gate region has a second width (Lb), along the second direction, that is different from the first width.

公开(公告)号：EP4203064A1

公开(公告)日：2023-06-28

申请号：EP22215156.5

申请日：2022-12-20

申请人： NXP USA, Inc.

发明人： Grote, Bernhard ,  Kabir, Humayun ,  Green, Bruce McRae ,  Khalil, Ibrahim

IPC分类号： H01L29/423 ,  H01L29/778 ,  H01L21/338 ,  H01L29/40 ,  H01L29/08 ,  H01L29/20

摘要： A semiconductor device includes a semiconductor substrate (110), a first dielectric layer (130) disposed over the upper surface of the semiconductor substrate, a second dielectric layer (150) disposed over the first dielectric layer, a third dielectric layer (155) disposed over the second dielectric layer, a lower opening (136) formed in the first dielectric layer, an upper opening (158) formed in the second dielectric layer and the third dielectric layer, wherein at least a portion of the upper opening overlaps a portion of the lower opening, and a control electrode (160) formed within at least a portion of the lower opening and within a portion of the upper opening, wherein a portion of the control electrode is formed over the third dielectric layer.

公开(公告)号：EP4158692A1

公开(公告)日：2023-04-05

申请号：EP21727492.7

申请日：2021-05-27

申请人： Epinovatech AB

发明人： OLSSON, Martin, Andreas

IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L29/06 ,  H01L29/20

公开(公告)号：EP3905340A1

公开(公告)日：2021-11-03

申请号：EP21177502.8

申请日：2017-05-08

申请人： RFHIC Corporation

发明人： LEE, Won Sang

IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L29/417 ,  H01L29/20 ,  H01L23/48 ,  H01L21/768 ,  H01L29/41 ,  H01L29/06

摘要： HEMT having a drain field plate (140) is provided. The drain field plate (140) is formed in the area between the gate (118) and drain (104) of a HEMT. The drain field plate (140) includes a metal pad (140) that has a larger projection area than the drain pad (104). The drain field plate (140) and semiconductor layer (102) disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area (102), which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate (100) under the active area (203) may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

公开(公告)号：EP2765612B1

公开(公告)日：2021-10-27

申请号：EP12829607.6

申请日：2012-09-07

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L29/26 ,  H01L29/812 ,  H01L21/02 ,  H01L29/772 ,  H01L29/78 ,  H01L29/24 ,  H01L29/36