SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Invention Grant

EP3940772B1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权

Patent Title: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Application No.: EP20893357.2

Application Date: 2020-06-15
Publication No.: EP3940772B1

Publication Date: 2024-07-17
Assignee: Changxin Memory Technologies, Inc.
Current Assignee: Changxin Memory Technologies, Inc.
Current Assignee Address: No. 388, Xingye Avenue Airport Industrial Park Economic and Technological Development Area
Agency: Lavoix
Priority: CN 1911205447 2019.11.29
International Application: CN2020096085 2020.06.15
International Announcement: WO2021103489 2021.06.03
Main IPC: H01L23/485
IPC: H01L23/485 ; H01L21/60 ; H01L23/31

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置
H01L23/482	..由不可拆卸地施加到半导体本体上的内引线组成的
H01L23/485	...包括导电层和绝缘层组成的层状结构，例如平面型触头