- 专利标题: METHOD FOR POLISHING TO-BE-POLISHED OBJECT INCLUDING MATERIAL HAVING SILICON-SILICON BOND
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申请号: EP20779911.5申请日: 2020-01-30
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公开(公告)号: EP3950877A1公开(公告)日: 2022-02-09
- 发明人: TSUCHIYA, Kohsuke , ASADA, Maki , MOMOTA, Satoshi
- 申请人: Fujimi Incorporated
- 申请人地址: JP Kiyosu-shi, Aichi 452-8502 1-1 Chiryo 2-chome Nishibiwajima-cho
- 代理机构: Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权: JP2019061187 20190327
- 国际公布: WO2020195149 20201001
- 主分类号: C09K3/14
- IPC分类号: C09K3/14 ; B24B37/00 ; H01L21/304
摘要:
The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P f . In this polishing method, the final polishing step P f has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step P ff of polishing using a polishing composition S ff , a polishing sub-step provided before the polishing sub-step P ff in the plurality of polishing sub-steps is a polishing sub-step P fp of polishing using a polishing composition S fp , and the polishing composition S ff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition S ff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition S fp obtained in the standard test 1, and condition (B): the polishing composition S ff contains an abrasive A ff , a basic compound B ff , and hydroxyethyl cellulose.
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