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11 条记录 (耗时 0.015 秒)

    POLISHING COMPOSITION
    1.
    发明公开
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：EP3950875A1

    公开(公告)日：2022-02-09

    申请号：EP20776335.0

    申请日：2020-03-25

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki ,  ICHITSUBO, Taiki

    IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

    摘要： Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.

    POLISHING COMPOSITION
    2.
    发明公开
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：EP3546542A1

    公开(公告)日：2019-10-02

    申请号：EP17873850.6

    申请日：2017-11-15

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki

    IPC分类号： C09K3/14 ,  B24B37/00 ,  C09G1/02 ,  H01L21/304

    摘要： Provided is a polishing composition that includes a cellulose derivative and is effective for reducing surface defects after polishing. According to the present application, a polishing composition comprising an abrasive, a basic compound and a surface protective agent is provided. The surface protective agent contains a cellulose derivative and a vinyl alcohol-based dispersant. The surface protective agent has a dispersibility parameter α of less than 100.

    METHOD FOR POLISHING TO-BE-POLISHED OBJECT INCLUDING MATERIAL HAVING SILICON-SILICON BOND
    4.
    发明公开
    METHOD FOR POLISHING TO-BE-POLISHED OBJECT INCLUDING MATERIAL HAVING SILICON-SILICON BOND 审中-公开

    公开(公告)号：EP3950877A1

    公开(公告)日：2022-02-09

    申请号：EP20779911.5

    申请日：2020-01-30

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki ,  MOMOTA, Satoshi

    IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

    摘要： The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P f . In this polishing method, the final polishing step P f has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step P ff of polishing using a polishing composition S ff , a polishing sub-step provided before the polishing sub-step P ff in the plurality of polishing sub-steps is a polishing sub-step P fp of polishing using a polishing composition S fp , and the polishing composition S ff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition S ff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition S fp obtained in the standard test 1, and condition (B): the polishing composition S ff contains an abrasive A ff , a basic compound B ff , and hydroxyethyl cellulose.

    SILICON SUBSTRATE INTERMEDIATE POLISHING COMPOSITION AND SILICON SUBSTRATE POLISHING COMPOSITION SET
    5.
    发明公开
    SILICON SUBSTRATE INTERMEDIATE POLISHING COMPOSITION AND SILICON SUBSTRATE POLISHING COMPOSITION SET 审中-公开

    公开(公告)号：EP3584823A1

    公开(公告)日：2019-12-25

    申请号：EP18754373.1

    申请日：2018-02-06

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  ASADA, Maki ,  MOMOTA, Satoshi

    IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14

    摘要： Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A 1 , a basic compound B 1 , and a surface protective agent S 1 . The surface protective agent S 1 includes a water-soluble polymer P 1 having a weight average molecular weight of higher than 30 × 10 4 and a dispersant D 1 , and has a dispersibility parameter α 1 of less than 80%.

    POLISHING COMPOSITION
    8.
    发明公开
    POLISHING COMPOSITION 审中-公开

    公开(公告)号：EP4279562A1

    公开(公告)日：2023-11-22

    申请号：EP22739421.0

    申请日：2022-01-12

    申请人： Fujimi Incorporated

    发明人： TANABE, Yoshiyuki ,  ASADA, Maki

    IPC分类号： C09K3/14 ,  H01L21/304

    摘要： Provided is a polishing composition that can achieve the suppression of reduction in the polishing removal rate and the cancellation of bumps at the periphery of an HLM, both at high levels. A polishing composition to be used for stock polishing of a silicon wafer is provided. The polishing composition contains an abrasive, a basic compound, a chelating agent, a surfactant, a nitrogen-containing water-soluble polymer, and water. A ratio (B/S) of a content (B) of the basic compound by weight to a content (S) of the surfactant by weight is 50 or more.

    POLISHING COMPOSITION AND POLISHING COMPOSITION SET
    9.
    发明公开
    POLISHING COMPOSITION AND POLISHING COMPOSITION SET 审中-公开

    公开(公告)号：EP3508550A1

    公开(公告)日：2019-07-10

    申请号：EP17846509.2

    申请日：2017-08-29

    申请人： Fujimi Incorporated ,  Toagosei Co., Ltd.

    发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ICHITSUBO, Taiki ,  ASADA, Maki

    IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

    摘要： Provided is a polishing composition effective for reducing surface defects. The polishing composition provided by the present invention includes an abrasive, a water-soluble polymer, and a basic compound. The water-soluble polymer includes a polymer A that satisfies both of the following conditions.
    (1) The polymer A includes a vinyl alcohol unit and a non-vinyl alcohol unit in one molecule.
    (2) An adsorption parameter calculated by [(C1 - C2)/C1] × 100 is 5 or more. Here, C1 is the total amount of organic carbon contained in a test liquid L1 including 0.017% by weight of the polymer A and 0.009% by weight of ammonia. The C2 is the total amount of organic carbon contained in a supernatant liquid obtained by centrifugally separating a test liquid L2 including 0.46% by weight of colloidal silica having a BET diameter of 35 nm, 0.017% by weight of the polymer A, and 0.009% by weight of ammonia, and precipitating the silica particles.