- 专利标题： METHOD FOR DETERMINING TARGET RESISTANCE LEVELS FOR A RESISTIVE MEMORY CELL, AND ASSOCIATED MEMORY DEVICE
-
申请号： EP20305941.5申请日： 2020-08-21
-
公开(公告)号： EP3958266A1公开(公告)日： 2022-02-23
- 发明人: BRICALLI, Alessandro , MOLAS, Gabriel , PICCOLBONI, Guiseppe , REGEV, Amir
- 申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives , Weebit Nano Ltd
- 申请人地址： FR 75015 Paris Bâtiment "Le Ponant D" 25, rue Leblanc; IL 4527713 Hod-HaSharon 24 Hanagar St
- 代理机构： Cabinet Camus Lebkiri
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C11/56 ; G11C29/02
摘要：
An aspect of the invention relates to a method for determining target resistance levels for a resistive memory cell. During the method at least one second target resistance level (R 3 ) based on a first target resistance level (R 4 ), and on a first resistance dispersion value (σ Δ ,R 4 ) representative of the dispersion of a first set of final resistance values obtained, after relaxing of the memory cell, for initial values of the resistance of the memory cell distributed over a first given initialisation interval (I 4 ) having a predetermined width (Δ 4 ), are determined.
Another aspect of the invention relates to a memory device comprising memory cells and an electronic control device configured to control the memory cells at target resistance levels determined in accordance with said method.
Another aspect of the invention relates to a memory device comprising memory cells and an electronic control device configured to control the memory cells at target resistance levels determined in accordance with said method.
信息查询
