A magnetoresistive element (10) for a 2D magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a reference magnetization (210) and a sense layer (23) having a sense magnetization (230). The sense layer (23) comprises a sense synthetic antiferromagnetic (SAF) structure including a first sense sublayer (231) in contact with the tunnel barrier layer (22) and separated from a second sense sublayer (232) by a first nonmagnetic spacer layer (233) such that the first sense sublayer (231) is antiferromagnetically coupled to the second sense sublayer (232). The sense layer (23) is configured such that a sense magnetic ratio (ΔM) defined as: Δ M = Ms FM 2 t FM 2 − Ms FM 1 t FM 1 Ms FM 2 t FM 2 + Ms FM 1 t FM 1 wherein M SFM1 and M SFM2 are the spontaneous magnetizations of the first and second sense sublayers (231, 232) and t FM1 and t FM2 are the thicknesses of the first and second sense sublayers (231, 232); and wherein the sense magnetic ratio is between 0.1 and 0.25.