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公开(公告)号：EP4012431A1
公开(公告)日：2022-06-15
申请号：EP20315489.3
申请日：2020-12-11
摘要： Magnetoresistive element (2) comprising a reference layer (21) having a fixed reference magnetization (210), a sense layer (23) having a free sense magnetization (230) and a tunnel barrier layer (22) between the reference layer (21) and the sense layer (23); the magnetoresistive element (2) being configured to measure an external magnetic field (60) oriented substantially perpendicular to the plane of the layers (21, 23). The reference magnetization (210) being oriented substantially perpendicular to the plane of the reference layer (21). The sense magnetization (230) comprising a vortex configuration in the absence of an external magnetic field (60), the vortex configuration being substantially parallel to the plane of the sense layer (23) and having a vortex core (231) magnetization along an out-of-plane axis (50) substantially perpendicular to the plane of the sense layer (23).
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2.发明公开
公开(公告)号：EP3913386A1
公开(公告)日：2021-11-24
申请号：EP20315252.5
申请日：2020-05-20
IPC分类号： G01R33/09
摘要： Magnetic angular sensor element (20) destined to sense an external magnetic field (60), comprising a magnetic tunnel junction (2) containing a ferromagnetic pinned layer (21) having a pinned magnetization (210), a ferromagnetic sensing layer (23), and a tunnel magnetoresistance barrier layer (22); the ferromagnetic sensing layer (23) comprising a first sensing layer (23a) being in direct contact with the barrier layer (22) and having a first sensing magnetization (230a), a second sensing layer (23b) having a second sense magnetization (230b), and a metallic spacer (24) between the first sensing layer (23a) and the second sensing layer (23b); wherein the metallic spacer (24) is configured to provide an antiferromagnetic coupling between the first sensing magnetization (230a) and the second sensing magnetization (230b) such that the first sensing magnetization (230a) is oriented substantially antiparallel to the second sensing magnetization (230b); the second sensing magnetization (230b) being larger than the first sensing magnetization (230a), such that the second sensing magnetization (230b) is oriented in accordance with the direction of the external magnetic field (60).
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3.发明公开
公开(公告)号：EP3971598A1
公开(公告)日：2022-03-23
申请号：EP20315414.1
申请日：2020-09-18
摘要： A magnetoresistive element (10) for a 2D magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a reference magnetization (210) and a sense layer (23) having a sense magnetization (230). The sense layer (23) comprises a sense synthetic antiferromagnetic (SAF) structure including a first sense sublayer (231) in contact with the tunnel barrier layer (22) and separated from a second sense sublayer (232) by a first nonmagnetic spacer layer (233) such that the first sense sublayer (231) is antiferromagnetically coupled to the second sense sublayer (232). The sense layer (23) is configured such that a sense magnetic ratio (ΔM) defined as: Δ M = Ms FM 2 t FM 2 − Ms FM 1 t FM 1 Ms FM 2 t FM 2 + Ms FM 1 t FM 1 wherein M SFM1 and M SFM2 are the spontaneous magnetizations of the first and second sense sublayers (231, 232) and t FM1 and t FM2 are the thicknesses of the first and second sense sublayers (231, 232); and wherein the sense magnetic ratio is between 0.1 and 0.25.
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公开(公告)号：EP4231031A1
公开(公告)日：2023-08-23
申请号：EP22315037.6
申请日：2022-02-22
发明人： Dounia, Salim , Cuchet, Léa , Strelkov, Nikita , Ducruet, Clarisse , Timopheev, Andrey , Childress, Jeffrey
摘要： Magnetoresistive element (2) comprising a reference layer (23) having a fixed reference magnetization (230); a ferromagnetic sense layer (21) having a free sense magnetization (210) having a stable vortex configuration that is orientable relative to the fixed reference magnetization (230) in the presence of an external magnetic field (60); and a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21) and contacting a first side (211) of the sense layer (21). The magnetoresistive element (2) further comprises a hard magnetic layer (25) arranged on a second side (212) of the sense layer (21) opposed to the first side (211), the hard magnetic layer (25) being configured to generate an interfacial magnetic coupling between the hard magnetic layer (25) and the sense layer (21) on the second side (212), such as to prevent chirality switching of the sense magnetization (210) after the magnetoresistive element (2) has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.
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公开(公告)号：EP4198541A1
公开(公告)日：2023-06-21
申请号：EP21315282.0
申请日：2021-12-17
发明人： Strelkov, Nikita , Timopheev, Andrey , Cuchet, Léa
摘要： The present disclosure concerns a magnetoresistive element comprising a reference layer (21) having a reference magnetization (210) oriented out-of-plane; a sense layer (23) having a sense magnetization (230) comprising a vortex configuration stable under the presence of an external magnetic field (60) and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field (60) varies in a direction out-of-plane; and a tunnel barrier layer (22) between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer (23) comprises a ferromagnetic material configured such that the sense magnetization is between 300 and1400 emu/cm 3 and such that the sense layer (23) has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×10 3 A/m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.
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6.发明公开
公开(公告)号：EP3992655A1
公开(公告)日：2022-05-04
申请号：EP20315443.0
申请日：2020-11-03
摘要： The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.
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