- 专利标题: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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申请号: EP22170649.2申请日: 2020-04-14
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公开(公告)号: EP4057365A2公开(公告)日: 2022-09-14
- 发明人: WANG, Hui-Lin , WANG, Yu-Ping , WENG, Chen-Yi , HSIEH, Chin-Yang , LEE, Yi-Hui , LIU, Ying-Cheng , SHIH, Yi-An , TSENG, I-Ming , JHANG, Jing-Yin , LIN, Chien-Ting
- 申请人: United Microelectronics Corp.
- 申请人地址: TW Hsin-Chu City 300 No. 3, Lin-Hsin Rd. 2 Science-Based Industrial Park
- 代理机构: Isarpatent
- 优先权: CN201910688355 20190729
- 主分类号: H01L43/08
- IPC分类号: H01L43/08 ; G11C11/15 ; H01L43/12
摘要:
A semiconductor structure, comprising: a substrate having a memory device region and a logic device region; a first dielectric layer on the substrate; a plurality of memory stack structures on the first dielectric layer on the memory device region; a single insulating layer continuously and conformally covering the memory stack structures and the first dielectric layer, wherein the single insulating layer directly contacts top surfaces and sidewalls of the memory stack structures, and a thickness of the single insulating layer on top surfaces of the memory stack structures is smaller than a thickness of the single insulating layer on sidewalls of the memory stack structures; a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures; a third dielectric layer on the second dielectric layer; and a plurality of top vias formed in the third dielectric layer and respectively aligned to one of the memory stack structures, wherein the top vias penetrate the insulating layer on the top surfaces of the memory stack structures to directly contacting the memory stack structures.
公开/授权文献
- EP4057365A3 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 公开/授权日:2022-11-30
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