- 专利标题: SEMICONDUCTOR DEVICE WITH DIRECTING STRUCTURE AND METHOD THEREFOR
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申请号: EP22169187.6申请日: 2022-04-21
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公开(公告)号: EP4092829A1公开(公告)日: 2022-11-23
- 发明人: Wenzel, Robert Joseph , Vincent, Michael B.
- 申请人: NXP USA, Inc.
- 申请人地址: US Austin TX 78735 6501 William Cannon Drive West
- 代理机构: Schmütz, Christian Klaus Johannes
- 优先权: US202117321630 20210517
- 主分类号: H01Q15/10
- IPC分类号: H01Q15/10 ; H01Q1/22 ; H01Q1/40 ; H01Q19/09
摘要:
A semiconductor device having a radiating element and a directing structure is provided. The semiconductor device includes a device package. A semiconductor die is coupled to the radiating element integrated in the device package. The directing structure is affixed to the device package by way of an adhesive. The directing structure is located over the radiating element and configured for propagation of radio frequency (RF) signals.
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