- 专利标题： METHOD FOR PROGRAMMING AN ARRAY OF RESISTIVE MEMORY CELLS
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申请号： EP21177707.3申请日： 2021-06-04
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公开(公告)号： EP4099327A1公开(公告)日： 2022-12-07
- 发明人: MOLAS, Gabriel , BRICALLI, Alessandro , PICCOLBONI, Guiseppe , REGEV, Amir
- 申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives , Weebit Nano Ltd
- 申请人地址： FR 75015 Paris Bâtiment "Le Ponant D" 25, rue Leblanc; IL 4527713 Hod-HaSharon 24 Hanagar St
- 代理机构： Cabinet Camus Lebkiri
- 主分类号： G11C13/00
- IPC分类号： G11C13/00
摘要：
The invention relates to a method for programming at least one resistive memory cell of an array of resistive memory cells, said method comprising a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle comprising a set step and a reset step, each set step comprising the application of a set technique chosen among a plurality of set techniques, said method comprising the following steps:
- acquiring a bit error ratio (BER) value corresponding to each programming cycle for each set technique;
- at each programming cycle, applying the set technique having the lowest bit error ratio (BER) value corresponding to said programming cycle.
- acquiring a bit error ratio (BER) value corresponding to each programming cycle for each set technique;
- at each programming cycle, applying the set technique having the lowest bit error ratio (BER) value corresponding to said programming cycle.
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