A method of forming a phase change switching device (100) includes providing a substrate (102), forming first and second RF terminals (106, 108) on the substrate, forming a strip of phase change material (114) on the substrate that is connected between the first and second RF terminals, forming a heating element (116) adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.