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公开(公告)号：EP4184585A1
公开(公告)日：2023-05-24
申请号：EP21210079.6
申请日：2021-11-23
发明人： FUCHS, Cornelius , KRIZ, Jakob , MARKERT, Matthias
摘要： Substrate arrangement for a micro display, the substrate arrangement comprising a semiconductor substrate, a back end of line (BEOL) stack, wherein the BEOL stack is arranged on the semiconductor substrate and wherein the BEOL stack comprises a plurality of structured wiring layers, an insulating material structure (IMS), and a recess in the IMS, wherein the plurality of structured wiring layers are stacked and embedded in the insulating material structure, and wherein an upmost structured wiring layer of the plurality of structured wiring layers comprises a plurality of contact pads, and wherein the recess extends to a first set of contact pads of the plurality of contact pads; and a conductive layer, having a metallic material, on the surface of the BEOL stack, wherein the conductive layer comprises a first, structured portion comprising a contact pad array and wherein the conductive layer comprises a second portion that is arranged on the first set of contact pads of the BEOL stack , and wherein the first portion of the conductive layer is electrically separated from the second portion of the conductive layer; and wherein the first set of contact pads of the BEOL stack and the second portion of the conductive layer are configured to form recessed wire-bond pads.
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公开(公告)号：EP4106023A3
公开(公告)日：2023-04-26
申请号：EP22179645.1
申请日：2022-06-17
IPC分类号： H01L45/00
摘要： A method of forming a phase change switching device (100) includes providing a substrate (102), forming first and second RF terminals (106, 108) on the substrate, forming a strip of phase change material (114) on the substrate that is connected between the first and second RF terminals, forming a heating element (116) adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.
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公开(公告)号：EP4106023A2
公开(公告)日：2022-12-21
申请号：EP22179645.1
申请日：2022-06-17
IPC分类号： H01L45/00
摘要： A method of forming a phase change switching device (100) includes providing a substrate (102), forming first and second RF terminals (106, 108) on the substrate, forming a strip of phase change material (114) on the substrate that is connected between the first and second RF terminals, forming a heating element (116) adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.
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公开(公告)号：EP3916818A1
公开(公告)日：2021-12-01
申请号：EP20176725.8
申请日：2020-05-27
IPC分类号： H01L45/00
摘要： The disclosed switch device (10), particularly for switching RF signals, includes a phase change material (15) provided at least partially in a trench (12) formed in a semiconductor substrate (11). A heater (16) for heating the phase change material is also at least partially disposed in the substrate, preferably such that a curved portion of phase change material surrounds the heater.
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