- 专利标题: HIGH PRECISION AND HIGHLY EFFICIENT TUNING MECHANISMS AND ALGORITHMS FOR ANALOG NEUROMORPHIC MEMORY IN ARTIFICIAL NEURAL NETWORKS
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申请号: EP22187616.2申请日: 2018-10-30
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公开(公告)号: EP4116979A1公开(公告)日: 2023-01-11
- 发明人: TRAN, Hieu Van , TIWARI, Vipin , DO, Nhan , LEMKE, Steven , HARIHARAN, Santosh , HONG, Stanley
- 申请人: Silicon Storage Technology Inc.
- 申请人地址: US San Jose CA 95134 450 Holger Way
- 代理机构: Betten & Resch
- 优先权: US201715826345 20171129
- 主分类号: G11C11/54
- IPC分类号: G11C11/54 ; G11C11/56 ; G11C16/10 ; G11C16/26 ; G11C16/34 ; G11C16/24 ; G11C16/16 ; G11C16/12 ; G11C16/04
摘要:
An artificial neural network device that utilizes analog neuromorphic memory that comprises one or more non-volatile memory arrays. The embodiments comprise improved mechanisms and algorithms for tuning the non-volatile memory arrays such that the floating gates of the memory cells can be quickly and accurately injected with the desired amount of charge to signify an analog value utilized as a weight by the artificial neural network.
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