- 专利标题: METHOD FOR PREPARING THERMOELECTRIC THICK FILM
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申请号: EP20926661.8申请日: 2020-05-06
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公开(公告)号: EP4129895A1公开(公告)日: 2023-02-08
- 发明人: SHI, Xun , QIU, Pengfei , GAO, Zhiqiang , CHEN, Lidong , YANG, Shiqi , YANG, Qingyu
- 申请人: Shanghai Institute of Ceramics, Chinese Academy of Sciences
- 申请人地址: CN Shanghai 200050 No.1295 Ding Xi Road Changning District
- 代理机构: Leinweber & Zimmermann
- 优先权: CN202010207506 20200323
- 国际公布: WO2021189602 20210930
- 主分类号: C01B19/04
- IPC分类号: C01B19/04 ; H01L35/16
摘要:
The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining the brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: the linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and the amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; the temperature of the annealing being 100°C to 800°C, preferably 300°C to 500°C, and the duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.
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