METHOD FOR PREPARING QUANTUM DOTS OF LEAD SELENIDE
    5.
    发明公开
    METHOD FOR PREPARING QUANTUM DOTS OF LEAD SELENIDE 有权
    VERFAHREN ZUR ERZEUGUNG VON BLEISELENID-QUANTENPUNKTEN

    公开(公告)号:EP2570383A1

    公开(公告)日:2013-03-20

    申请号:EP10851207.0

    申请日:2010-05-11

    Abstract: Provided is a method for preparing quantum dots of lead selenide, comprising the following steps: 1) mixing selenium powder with octadecene, heating with stirring to dissolve the selenium powder fully, maintaining the temperature, then cooling to room temperature to obtain a stock solution of selenium; 2) mixing lead compound, oleic acid, octadecene and benzophenone together, and dissolving to obtain a stock solution of lead, then maintaining the temperature at 130-190°C; 3) adding the stock solution of selenium into the stock solution of lead rapidly, and maintaining the temperature at 100-160°C, after cooling, quantum dots of lead selenide are initially prepared; 4) adding the initially prepared quantum dots of lead selenide into a mixture of toluene and methanol, centrifugating and the supernatant to obtain a precipitate, then redissolving the precipitate with toluene to obtain a transparent solution of quantum dots of pure lead selenide. The method is safe in operation, simple, good in reproducibility and low in cost.

    Abstract translation: 提供了一种制备硒化铅量子点的方法,包括以下步骤:1)将硒粉与十八碳烯混合,搅拌加热,充分溶解硒粉,保持温度,然后冷却至室温,得到 硒; 2)将铅化合物,油酸,十八碳烯和二苯甲酮混合在一起,溶解得到铅原液,然后保持温度在130-190℃; 3)将硒原液快速添加到铅储备溶液中,保持温度在100-160℃,冷却后,首先制备硒化铅的量子点; 4)将最初制备的硒化铅量子点添加到甲苯和甲醇的混合物中,离心分离上清液,得到沉淀物,然后用甲苯再溶解沉淀物,得到纯硒化铅量子点的透明溶液。 该方法操作安全,简单,重现性好,成本低。

    CdTe single crystal and CdTe polycrystal, and method for producing the same
    6.
    发明公开
    CdTe single crystal and CdTe polycrystal, and method for producing the same 审中-公开
    CdTe-EINKRISTALL UND CdTe-POLYKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号:EP2336400A2

    公开(公告)日:2011-06-22

    申请号:EP11159885.0

    申请日:2002-11-29

    Inventor: Hirano, Ryuichi

    CPC classification number: C30B11/002 C30B15/10 C30B29/48

    Abstract: A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0 × 10 9 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

    Abstract translation: CdTe单晶,其中,晶体中的氯浓度为0.1〜5.0ppm,室温下的电阻率为1.0×10 9Ω·cm以上,通过使用垂直梯度冷冻法, 水平梯度冷冻法,垂直布里奇曼法,水平布里奇曼法和液体封装的切克劳斯基法,其中掺杂有50-200ppm重量的氯的CdTe多晶为原料。

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