- 专利标题: HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR
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申请号: EP22184070.5申请日: 2022-07-11
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公开(公告)号: EP4138124A2公开(公告)日: 2023-02-22
- 发明人: THEN, Han Wui , RADOSAVLJEVIC, Marko
- 申请人: INTEL Corporation
- 申请人地址: US Santa Clara, CA 95054 2200 Mission College Blvd.
- 代理机构: Goddar, Heinz J.
- 优先权: US202117403041 20210816
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L29/76
摘要:
High voltage metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.
公开/授权文献
- EP4138124B1 HIGH VOLTAGE METAL INSULATOR METAL (MIM) CAPACITOR 公开/授权日:2024-08-21
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