- 专利标题： AG ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
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申请号： EP21882506.5申请日： 2021-09-24
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公开(公告)号： EP4234734A1公开(公告)日： 2023-08-30
- 发明人: ARAKI, Noritoshi , OOKABE, Takumi , ODA, Daizo , UNO, Tomohiro , OYAMADA, Tetsuya
- 申请人： Nippon Micrometal Corporation , NIPPON STEEL Chemical & Material Co., Ltd.
- 申请人地址： JP Iruma-shi Saitama 358-0032 158-1, Oaza-Sayamagahara; JP Tokyo 103-0027 13-1, Nihonbashi 1-chome, Chuo-ku,
- 代理机构： Vossius & Partner Patentanwälte Rechtsanwälte mbB
- 优先权： JP2020175760 20201020
- 国际公布： WO2022085365 20220428
- 主分类号： C22C5/06
- IPC分类号： C22C5/06 ; C22F1/00 ; C22F1/14 ; H01L21/60
摘要：
There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):
(1) a concentration of Te is 5 to 500 at. ppm;
(2) a concentration of Bi is 5 to 500 at. ppm; and
(3) a concentration of Sb is 5 to 1,500 at. ppm.
(1) a concentration of Te is 5 to 500 at. ppm;
(2) a concentration of Bi is 5 to 500 at. ppm; and
(3) a concentration of Sb is 5 to 1,500 at. ppm.
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