发明公开
- 专利标题： DEVICE WITH AIRGAP STRUCTURE
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申请号： EP22200004.4申请日： 2022-10-06
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公开(公告)号： EP4254476A2公开(公告)日： 2023-10-04
- 发明人: RAGHUNATHAN, Uppili S. , JAIN, Vibhor , ADUSUMILLI, Siva P. , NGU, Yves T. , KANTAROVSKY, Johnatan A. , VENTRONE, Sebastian T.
- 申请人： GlobalFoundries U.S. Inc.
- 申请人地址： US Malta, NY 12020 400 Stonebreak Road Extension
- 代理机构： Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权： US202217707273 20220329
- 主分类号： H01L21/764
- IPC分类号： H01L21/764 ; H01L21/762 ; H01L29/06
摘要：
A structure comprising a semiconductor substrate comprising a trap-rich region; at least one airgap structure within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the at least one airgap structure and extending into the semiconductor substrate; and a device over the at least one airgap structure.
公开/授权文献
- EP4254476A3 DEVICE WITH AIRGAP STRUCTURE 公开/授权日：2023-10-11
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