公开(公告)号：EP4404245A3

公开(公告)日：2024-08-07

申请号：EP23202561.9

申请日：2023-10-10

申请人： GlobalFoundries U.S. Inc.

发明人： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC分类号： H01L21/331 ,  H01L23/34 ,  H01L29/73 ,  H01L29/737 ,  H01L21/324 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L29/7371 ,  H01L29/7302 ,  H01L29/0821 ,  H01L29/66242 ,  H01L21/324 ,  H01L23/34 ,  H01L29/0649

摘要： The present disclosure relates to semiconductor structures and, more particularly, to heater elements, methods of operation and methods of manufacture. The structure includes: an active device; a heater element under the active device and within a semiconductor substrate; and a contact to the heater element and the active device.

公开(公告)号：EP4404272A1

公开(公告)日：2024-07-24

申请号：EP23202560.1

申请日：2023-10-10

申请人： GlobalFoundries U.S. Inc.

发明人： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC分类号： H01L29/737 ,  H01L29/73 ,  H01L21/8226 ,  H01L23/34 ,  H01L29/08 ,  H01L29/417 ,  H01L21/331

CPC分类号： H01L29/0821 ,  H01L29/7302 ,  H01L29/7371 ,  H01L29/66242 ,  H01L29/41708 ,  H01L27/067 ,  H01L21/764 ,  H01L21/76224 ,  H01L29/0642

摘要： The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.

公开(公告)号：EP4383357A1

公开(公告)日：2024-06-12

申请号：EP23199267.8

申请日：2023-09-25

申请人： GlobalFoundries U.S. Inc.

发明人： DERRICKSON, Alexander ,  RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  BIAN, Yusheng ,  HOLT, Judson R.

IPC分类号： H01L31/11 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/0224

CPC分类号： H01L31/1105 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/022408

摘要： The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor (12); and a T-shaped photosensitive structure (20) vertically above an intrinsic base (12d) of the lateral bipolar transistor.

公开(公告)号：EP4254476A2

公开(公告)日：2023-10-04

申请号：EP22200004.4

申请日：2022-10-06

申请人： GlobalFoundries U.S. Inc.

发明人： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  ADUSUMILLI, Siva P. ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC分类号： H01L21/764 ,  H01L21/762 ,  H01L29/06

摘要： A structure comprising a semiconductor substrate comprising a trap-rich region; at least one airgap structure within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the at least one airgap structure and extending into the semiconductor substrate; and a device over the at least one airgap structure.

公开(公告)号：EP4404245A2

公开(公告)日：2024-07-24

申请号：EP23202561.9

申请日：2023-10-10

申请人： GlobalFoundries U.S. Inc.

发明人： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC分类号： H01L21/331 ,  H01L23/34 ,  H01L29/73 ,  H01L29/737 ,  H01L21/324 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L29/7371 ,  H01L29/7302 ,  H01L29/0821 ,  H01L29/66242 ,  H01L21/324 ,  H01L23/34 ,  H01L29/0649

摘要： The present disclosure relates to semiconductor structures and, more particularly, to heater elements, methods of operation and methods of manufacture. The structure includes: an active device; a heater element under the active device and within a semiconductor substrate; and a contact to the heater element and the active device.

公开(公告)号：EP4254476A3

公开(公告)日：2023-10-11

申请号：EP22200004.4

申请日：2022-10-06

申请人： GlobalFoundries U.S. Inc.

发明人： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  ADUSUMILLI, Siva P. ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC分类号： H01L21/764 ,  H01L21/762 ,  H01L29/06 ,  H01L29/16 ,  H01L29/73

摘要： A structure comprising a semiconductor substrate comprising a trap-rich region; at least one airgap structure within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the at least one airgap structure and extending into the semiconductor substrate; and a device over the at least one airgap structure.