The disclosure pertains to a light detecting device that includes: a first pixel (21) and a second pixel (21), wherein the first pixel (21) includes a first semiconductor region (31) and a second semiconductor region (32), and the second pixel (21) includes a third semiconductor region (31) and a fourth semiconductor region (32); and a first wiring layer (23) that includes: a first electrode (37), a first via (38) coupled to the first electrode (37) and the first semiconductor region (31), and a second via (38) coupled to the first electrode (37) and the third semiconductor region (31); wherein a conductivity type of the first semiconductor region (31) is opposite to a conductivity type of the second semiconductor region (32).