- 专利标题: SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
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申请号: EP23170864.5申请日: 2023-04-28
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公开(公告)号: EP4270979A1公开(公告)日: 2023-11-01
- 发明人: TATSUTA, Kazuki , OKURA, Shunsuke , MIYAUCHI, Ken , OWADA, Hideki , HAN, Sangman , TAKAYANAGI, Isao
- 申请人: BRILLNICS SINGAPORE PTE. LTD. , The Ritsumeikan Trust
- 申请人地址: SG Singapore 079906 79 Anson Road No. 07-03; JP Kyoto-shi, Kyoto 604-8520 8 Nishinokyo-Higashi-Togano-cho Nakagyo-ku
- 代理机构: V.O.
- 优先权: JP2022074847 20220428
- 主分类号: H04N25/59
- IPC分类号: H04N25/59 ; H04N25/771
摘要:
A solid-state imaging device (10, 10A to 10L), a method for driving a solid-state imaging device (10, 10A to 10L) and an electronic apparatus (300) are capable of reducing kTC noise of a LCG signal, preventing a drop in SNR at the conjunction point between a HCG signal and the LCG signal, and eventually achieving improved image quality. At a start of a reset period (PR1), first and second reset transistors (RST11-Tr, RST12-Tr) are switched into a conduction state. During a predetermined first period (PR11) after the reset period (PR1) starts, the first reset line (LRST1) is kept connected to a reset potential (Vdd). After the first period (PR11) elapses, the second reset transistor (RST12-Tr) is switched into a non-conduction state to switch the first reset line (LRST1) into a floating state, so that the first reset line (LRST1) has high impedance. After a second period (PR12) elapses and when the reset period (PR1) ends, the first reset transistor (RST11-Tr) is switched into the non-conduction state.
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