The present invention concerns a SiC growth substrate for growing SiC in a CVD reactor. The SiC growth substrate comprises a main body, a first power connection (and a second power connection, wherein the main body has a main body length, wherein the main body length (ML) extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a physical structure, wherein the physical structure forms a deposition surface for deposition of SiC for growing a SiC crust, wherein the physical structure is configured to resist forces generated during growth of the SiC crust having a minimal thickness of at least 1cm for preventing cracking of the physical structure due to the generated forces at least in a defined volume section of the physical structure, wherein the defined volume section is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 5% of the main body length.