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    METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SIC PIECE
    1.
    发明公开
    METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SIC PIECE 审中-公开

    公开(公告)号：EP4279451A1

    公开(公告)日：2023-11-22

    申请号：EP22173970.9

    申请日：2022-05-18

    申请人： Zadient Technologies SAS

    发明人： Ceran, Kagan ,  Schaaf, Friedrich

    IPC分类号： C01B32/963 ,  C01B32/977 ,  C23C16/32

    摘要： The present invention refers to a method for producing at least one crack-free SiC piece at least comprising the steps:
    Providing a CVD reactor, wherein the CVD reactor comprises at least one SiC growth substrate, wherein the at least one SiC growth substrate comprises a main body, a first power connection and a second power connection, wherein the main body has a main body length, wherein the main body length extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a physical structure, wherein the physical structure forms a deposition surface for deposition of SiC, Growing a SiC solid by depositing SiC on the physical structure in the CVD reactor, wherein the at least one crack-free SiC piece is part of the SiC solid, wherein the deposited SiC has a minimal thickness of at least 1cm, wherein the at least one SiC piece is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 1% of the main body length, Removing the at least one crack-free SiC piece from the SiC solid, wherein the at least one crack-free SiC piece has a cross-sectional size of at least 4cm2 and a thickness of at least 0,1cm.

    SIC GROWTH SUBSTRATE, CVD REACTOR AND METHOD FOR THE PRODUCTION OF SIC
    2.
    发明公开
    SIC GROWTH SUBSTRATE, CVD REACTOR AND METHOD FOR THE PRODUCTION OF SIC 审中-公开

    公开(公告)号：EP4279452A1

    公开(公告)日：2023-11-22

    申请号：EP22173980.8

    申请日：2022-05-18

    申请人： Zadient Technologies SAS

    发明人： CERAN, Kagan ,  SCHAAF, Friedrich

    IPC分类号： C01B32/963 ,  C01B32/977 ,  C23C16/32

    摘要： The present invention concerns a SiC growth substrate for growing SiC in a CVD reactor. The SiC growth substrate comprises a main body, a first power connection (and a second power connection, wherein the main body has a main body length, wherein the main body length (ML) extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a physical structure, wherein the physical structure forms a deposition surface for deposition of SiC for growing a SiC crust, wherein the physical structure is configured to resist forces generated during growth of the SiC crust having a minimal thickness of at least 1cm for preventing cracking of the physical structure due to the generated forces at least in a defined volume section of the physical structure, wherein the defined volume section is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 5% of the main body length.

    POLYCRYSTALLINE SIC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME
    4.
    发明公开
    POLYCRYSTALLINE SIC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME 审中-实审

    公开(公告)号：EP4343021A1

    公开(公告)日：2024-03-27

    申请号：EP23821858.0

    申请日：2023-05-15

    申请人： Tokai Carbon Co., Ltd.

    发明人： SUGIHARA, Takaomi ,  USHIJIMA, Yuji

    IPC分类号： C23C16/42 ,  C01B32/977

    摘要： The present invention provides a polycrystalline SiC formed body having a low resistivity and a small variation in resistivity in a thickness direction thereof, and a method for producing the same. In the polycrystalline SiC formed body, a resistivity is 0.050 Ωcm or less, and an average value of peak intensity ratios (A/B) is 0.040 or less, and a difference between an average of peak intensity ratios on a growth surface side and an average of peak intensity ratios on a substrate surface side is 0.040 or less, wherein "A" represents a peak intensity within a range of wavenumber of 950 to 970 cm -1 of a Raman spectrum and "B" represents a peak intensity within a range of wavenumber of 780 to 800 cm -1 in a Raman spectrum.