- 专利标题: METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
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申请号: EP23173771.9申请日: 2023-05-16
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公开(公告)号: EP4294161A1公开(公告)日: 2023-12-20
- 发明人: LIN, Chia-Ching , CHANG, Sou-Chi , OGUZ, Kaan , SEN GUPTA, Arnab , TUNG, I-Cheng , LEE, Sudarat , METZ, Matthew V. , CLENDENNING, Scott B. , AVCI, Uygar E. , YOUNG, Ian A.
- 申请人: INTEL Corporation
- 申请人地址: US Santa Clara, CA 95054 2200 Mission College Blvd.
- 代理机构: HGF
- 优先权: US202318129258 20230331
- 主分类号: H10N97/00
- IPC分类号: H10N97/00
摘要:
Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode. An insulator is over the first electrode. The insulator includes a first layer, and a second layer over the first layer. The first layer has a leakage current that is less than a leakage current of the second layer. The second layer has a dielectric constant that is greater than a dielectric constant of the first layer. A second electrode is over the insulator.
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