A nonvolatile memory device is provided. The nonvolatile memory device includes: a bitline; a precharge transistor configured to electrically connect the bitline to a power supply voltage during a precharge period of a read operation to transmit a bitline current flowing from the power supply voltage to the bitline; a cell string connected between the bitline and a source line, the cell string including a plurality of memory cells and being configured to transmit a first portion of the bitline current as a cell current; and a current control switch circuit connected between the bitline and a sink node, the current control switch circuit being configured to transmit a second portion of the bitline current as a control current flowing from the bitline to the sink node during the precharge period.